Gallium nitride thin films have attracted attention due to their prospects in semiconductor devices and technology. In this study, investigation is on the electrical properties and also performing deep-level transient spectroscopy (DLTS) on Au/Ni Schottky diodes fabricated on gallium nitride thin films that were synthesized by electrodeposition on a Si (111) substrate from a solution containing gallium nitrate (Ga(NO3)3) and ammonium nitrate (NH4(NO3)) using current densities of 1 and 3 mA/cm2.
Funding
National Research Foundation (NRF), Grant Number:111744 and 137977