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Data Set for Electrical characterization of AuNi Schottky contacts on GaN synthesized using electrodeposition .xlsx (101.1 kB)

AuNi Schottky contacts on GaN

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posted on 2023-02-21, 11:08 authored by Abdulraoof AliAbdulraoof Ali, Walter MeyerWalter Meyer

Gallium nitride thin films have attracted attention due to their prospects in semiconductor devices and technology. In this study, investigation is on the electrical properties and also performing deep-level transient spectroscopy (DLTS) on Au/Ni Schottky diodes fabricated on gallium nitride thin films that were synthesized by electrodeposition on a Si (111) substrate from a solution containing gallium nitrate (Ga(NO3)3) and ammonium nitrate (NH4(NO3)) using current densities of 1 and 3 mA/cm2. 

Funding

National Research Foundation (NRF), Grant Number:111744 and 137977

History

Department/Unit

Physics